On Wednesday, April 22, 2026, a seminar titled “The Silicon Oxynitride (Si₄O₅N₃ - SION), Gate Controlled Material for SiC-based MOSFET: From Unexpected Growth to Current Potentials” was organized by the Engineering Students’ Association of Bangladesh (ESAB) – AIUB Unit Face, at Annex-3, Room 3203, American International University-Bangladesh (AIUB).

The program commenced with opening remarks by Prof. Dr. A. B. M. Siddique Hossain (Dean, Faculty of Engineering, AIUB, Advisor, ESAB AIUB Unit Face). He emphasized the objectives of the seminar, the significance of MOSFET technology, its applications, and global perspectives in this field.

The keynote session was delivered by Dr. Md. Kabiruzzaman (Associate Professor, Department of Electrical and Electronic Engineering, AIUB). He discussed the history of Si₄O₅N₃, its advantages compared to other materials, and its fabrication process. He also highlighted AIUB’s contributions in device modeling and electrical characterization, providing valuable insights into ongoing research and future opportunities.

The seminar was attended by respected faculty members, including Mr. Md. Shahariar Parvez (Assistant Professor, Faculty of Engineering, Special Assistant (OSA), AIUB, Mentor, ESAB AIUB Unit Face), Mr. Mehedi Hasan (Senior Assistant Professor, Department of Electrical and Electronic Engineering, AIUB), and Mr. Mohammad Rabib Uddin (Lecturer, Department of Electrical and Electronic Engineering, AIUB).

An interactive Question-and-Answer session followed, where participants actively engaged with the speaker, creating a meaningful academic discussion environment.

The program concluded with closing remarks by Dr. Md. Saniat Rahman Zishan (Professor and Director, Faculty of Engineering, AIUB; Advisor, ESAB AIUB Unit Face). He expressed appreciation for the speaker’s valuable contribution and praised the active participation of students. A commemorative crest was presented to the speaker as a token of gratitude.