Epitaxial growth of SrO thin films on Ge(001) substrates by molecular beam epitaxy
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Abstract
Epitaxial Growth of SrO Thin Films on Ge(001) Substrates by Molecular Beam Epitaxy Nusaibah Tasnim1*, Md. Nurul Kabir Bhuiyan1,2, Mariela Menghini2, Jin Won Seo3 and Jean-Pierre Locquet2 1Department of Physics, American International University-Bangladesh, 408/1, Kuratoli Road, Khilkhet, Dhaka 1229, Bangladesh 2Department of Physics and Astronomy, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001, Leuven, Belgium 3Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Kasteelpark Arenberg 44, B-3001, Leuven, Belgium *Email: nusaibahtasnim6@gmail.com The high-κ SrO epitaxy layers grow on Si(001) substrates by molecular beam epitaxy (MBE) for the integration of functional oxides [1]. SrO has a NaCl structure. SrO epitaxy layers help to grow epitaxy of SrTiO3 by MBE [1,2]. The lattice consists of SrO is 5.14 Å. Base pressure of the MBE (DCA, Finland) system is 1×10-9 mbar. Ge(001) substrates were cleaned by annealing at 500°C in the pressure of 1.6×10-9 mbar for 20 min. Sr growth rate by QCM was 4 Å/min. RHEED patterns show that an amorphous SrO layer grows on Ge at 350°C. After post-annealing at 650°C, RHEED spotty patterns along with streaks indicate a transition from the amorphous to crystalline SrO epitaxy layers with island surfaces [1]. The size of the islands cannot be determined by RHEED only. SrO films grow on Ge(001) substrates in a cubic structure with only (001) orientation for the first time. The epitaxial-relationship is identified as SrO(001)‖Ge(001). References: [1] Md. Nurul Kabir Bhuiyan et al., Applied Surface Science, 216(2003)590 [2] R. Mckee et al., Physical Review Letters, 81 (1998)3014.
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Publication Details
- Type of Publication: Conference
- Conference Name: International Conference on Physics-2024
- Date of Conference: 05/09/2024 - 05/11/2024
- Venue: Atomic Energy Centre, Dhaka 1000, Bangladesh
- Organizer: Bangladesh Physical Society